70S600P7 Infineon CoolMOS P7 N-channel power MOSFET

The Infineon 70S600P7 is a 600V CoolMOS™ P7 series N-channel power MOSFET, engineered for high-efficiency, low-loss switching in modern power conversion systems. Combining excellent figure-of-merit (FOM) and optimized gate charge characteristics, this MOSFET provides outstanding performance in power supplies, LED drivers, adapters, and industrial applications.

With its low R_DS(on), reduced switching losses, and improved thermal behavior, the 70S600P7 enables designers to achieve higher power density and greater system reliability. Its robust avalanche capability and integrated gate protection make it ideal for both hard- and soft-switching topologies.

The CoolMOS™ P7 technology also ensures superior EMI behavior and simplified gate driving, delivering excellent efficiency even at light-load conditions.

Key Features:

• Drain-Source Voltage (V_DS): 600V

• Continuous Drain Current (I_D): ~7A (at 25°C, typical)

• R_DS(on): Ultra-low for reduced conduction loss

• Technology: Infineon CoolMOS™ P7 superjunction

• Gate Charge (Q_g): Optimized for fast switching

• High Efficiency & Low Switching Losses

• Robust Body Diode Performance

• Excellent EMI Behavior

• Enhanced dv/dt and Avalanche Ruggedness

• Package: TO-220 / DPAK (varies by version)

• Operating Temperature: –55°C to +150°C