SR360 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
HS-48 TOP220 Package Heat Sink
4 Pin RMC Connector
0.1uf 400V PPC Polyester Capacitor
- Capacitance: 0.1uf
- Voltage Rating DC: 400 V
- Tolerance: +/-10%
- Mounting: THT
- Leakage Current: 3 uA
- Dimensions:31*6*2.5 mm
- Operating Temperature: -40~85 C
- Lead Spacing: 7mm
- Lead Diameter : 0.5mm
- Non-inductive, epoxy DIP coated, high moisture resistance.
- The dissipation factor is normally low and it is stable against high frequency and change of temperature.
- Recommended for high-frequency circuits like an s-curve compensating circuit.
- High reliability because of its excellent Self-Healing performance
IN6A4 Diode
1uf 35V DC Tantalum Capacitor
BD136 PNP Transistor -45V -1.5A
BD135 NPN Transistor 45V 1.5A
0.015uf 250V DC Polyester Capacitor
- Capacitance: 0.015uf
- Voltage Rating DC: 250 V
- Tolerance: +/-5%
- Mounting: THT
- Leakage Current: 3 uA
- Dimensions:31*6*2.5 mm
- Operating Temperature: -40~85 C
- Lead Spacing: 7mm
- Lead Diameter : 0.5mm
- Non-inductive, epoxy DIP coated, high moisture resistance.
- The dissipation factor is normally low and it is stable against high frequency and change of temperature.
- Recommended for high-frequency circuits like an s-curve compensating circuit.
- High reliability because of its excellent Self-Healing performance.
IN5822 Power Schottky Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 40V
- Average Rectified Forward Current at TLÂ = 95oC, IO: 3A
- Peak Surge Forward Current, IFSM: 80A
- Guardring for overvoltage protection
- Very small conduction losses
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
