BY299 Diode
MOQ : 3 nos
- Maximum Repetitive Reverse Voltage, VRRM:Â 800V
- Average Rectified Forward Current at TAÂ = 75oC, IO:Â 2A
- Peak Surge Forward Current, IFSM: 70A
- Case: DO-201AD Molded plastic
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Epoxy: UL94V-O rate flame retardant
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Lead: Axial lead solderable per MIL-STD-202, Method 208 guaranteed
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Polarity: Color band denotes cathode end
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High current capability
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High surge current capability
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High reliability
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 Low reverse current
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 Low forward voltage drop
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 Fast switching for high efficiency
MUR480 Diode-Ultra Fast Recovery Rectifier
IN5399 Diode
FR306 Diode
FR107 Diode
DIAC DB3 – Trigger Diode
16FM160 Metal Diode 16A 1000V
R2M AVALANCHE Diode
- Working Peak Reverse Voltage (Stand-off Voltage), VRWM: 130 V
- Minimum Avalanche Breakdown Voltage at IT = 1mA, VBR(min): 135V
- Maximum Avalanche Breakdown Voltage at IT = 1mA, VBR(max): 180V
- Maximum Non-Repetitive Peak Reverse Surge Current IRSM:Â 2.6A
- Maximum Reverse Voltage (Clamping Voltage) at IRSM, VRSM: 234V
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Excellent clamping capability
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Low incremental surge resistance
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High-temperature soldering guaranteed:250oC/10S/9.5mm lead lengthat 5 lbs tension
IN4007 Diode
IN5822 Power Schottky Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 40V
- Average Rectified Forward Current at TLÂ = 95oC, IO: 3A
- Peak Surge Forward Current, IFSM: 80A
- Guardring for overvoltage protection
- Very small conduction losses
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
UF5408 Diode
- Maximum repetitive peak reverse voltage VRRM: 1000V
- Maximum RMS voltage VRMS:Â 700V
- Maximum DC blocking voltage VDC: 1000V
- Maximum average forward rectified current, 0.375" (9.5 mm) lead length at TA= 55°C, IF(AV) = 3.0V
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Diffused Junction
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 Low Forward Voltage Drop
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High Current Capability
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High Reliability
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High Surge Current Capability
MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction