DMV32 Dual Diode
SB20100CT Dual Diode 20A 100V
- Maximum Recurrent Peak Reverse Voltage VRRMÂ =100V
- Operating and Storage Temperature Range TJ = -50 to +125 °C
- Maximum DC Blocking Voltage VDCÂ =100V
- Low power loss, high efficiency
- Low forward voltage, high current capability
- High surge capacity
- For use in low voltage, high frequency inverters free wheeling, and polarity protection applications
MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
BYQ28E Dual Ultrafast Power Diode 200V 10A
IN5399 Diode
RU3 Diode
BY299 Diode
MOQ : 3 nos
- Maximum Repetitive Reverse Voltage, VRRM:Â 800V
- Average Rectified Forward Current at TAÂ = 75oC, IO:Â 2A
- Peak Surge Forward Current, IFSM: 70A
- Case: DO-201AD Molded plastic
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Epoxy: UL94V-O rate flame retardant
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Lead: Axial lead solderable per MIL-STD-202, Method 208 guaranteed
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Polarity: Color band denotes cathode end
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High current capability
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High surge current capability
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High reliability
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 Low reverse current
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 Low forward voltage drop
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 Fast switching for high efficiency
FR306 Diode
FR107 Diode
R2M AVALANCHE Diode
- Working Peak Reverse Voltage (Stand-off Voltage), VRWM: 130 V
- Minimum Avalanche Breakdown Voltage at IT = 1mA, VBR(min): 135V
- Maximum Avalanche Breakdown Voltage at IT = 1mA, VBR(max): 180V
- Maximum Non-Repetitive Peak Reverse Surge Current IRSM:Â 2.6A
- Maximum Reverse Voltage (Clamping Voltage) at IRSM, VRSM: 234V
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Excellent clamping capability
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Low incremental surge resistance
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High-temperature soldering guaranteed:250oC/10S/9.5mm lead lengthat 5 lbs tension
