IR LED Sensor
- Size: 5mm LED
- Wavelength: 940nm wavelength (most commonly used)
- Forward current (IF) is 100mA (normal condition) and 300mA (max.)
- 5A of surge forward current
- 24v to 1.4v of forward voltage
- Temperature : -40 to 100 ℃
- Soldering Temperature should not exceed 260 ℃
- Power Dissipation of 150mW at 25℃ (free-air temperature) or below
- Spectral bandwidth of 45nm
- Viewing angle: 30 to 40 degree
- High Reliability
- Excessive radiant intensity
- Having lead spacing of 2.54mm
- Easy to use with breadboard or perf board
Laser Diode Module Medium
LED55C GaAs Infrared Emitting Diode IC
MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
MBR3045 Dual Diode
- Maximum recurrent peak reverse voltage VRRM: 45V
- Maximum RMS Voltage VRMS: 31.5V
- Maximum DC blocking voltage VDC: 45V
- Power pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
MUR1560 Dual diode
- Peak Repetitive Reverse Voltage VRRMÂ = 600V
- Average Rectified Forward Current at TC = 145°C, IF(AV): 15A
- Maximum Instantaneous Forward Voltage at iF = 15 Amps, TC = 25°C, VF: 1.5VPower pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
MUR480 Diode-Ultra Fast Recovery Rectifier
R2KN Diode
- Maximum Reverse Voltage, VRM: 140V
- Minimum Avalanche Breakdown Voltage at IZ = 1mA, VBR(min): 150V
- Maximum Avalanche Breakdown Voltage at IZ = 1mA, VBR(max): 170V
- Maximum Allowable Avalanche Current, IZSM: 1A
- High current capability
- High surge current capability
- High reliability
- Low reverse current
- Low forward voltage drop
- Fast switching for high efficiency
R2M AVALANCHE Diode
- Working Peak Reverse Voltage (Stand-off Voltage), VRWM: 130 V
- Minimum Avalanche Breakdown Voltage at IT = 1mA, VBR(min): 135V
- Maximum Avalanche Breakdown Voltage at IT = 1mA, VBR(max): 180V
- Maximum Non-Repetitive Peak Reverse Surge Current IRSM:Â 2.6A
- Maximum Reverse Voltage (Clamping Voltage) at IRSM, VRSM: 234V
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Excellent clamping capability
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Low incremental surge resistance
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High-temperature soldering guaranteed:250oC/10S/9.5mm lead lengthat 5 lbs tension
RH1 Diode
RU3 Diode
S20C45C Dual Diode 20A 45V
- Peak Repetitive Reverse Voltage VRRM: 45V
- RMS Reverse Voltage VR(RMS): 32V
- Maximum Instantaneous Reverse Current at TC=100oC, IR: 20mA
- Low power loss, high efficiency.
- Low forward voltage, high current capability
- High surge capacity.
- For use in low voltage, high frequency inverters free wheeling , and polarity protection applications.