DIAC DB3 – Trigger Diode
2SK954 N-Channel Power Mosfet Transistor 800V 3A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on Time (ton): 60 nS
- Drain-Source Capacitance (Cd): 90 p
- Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
- Package:Â TO3P
2SK903 N-Channel Power Mosfet Transistor 800V 3A
2SK956 N-Channel Power Mo9Asfet Transistor 800V
0.22uf 63V Caps DC Electrolytic Capacitor
2SK791 N-Channel Mosfet Transistor 850V 3A
2SK793 N-Channel Mosfet Transistor 850V 5A
- N-Channel Mosfet
- Drain Current: 5A
- Drain Source Voltage: Â 850V
- Static Drain-Source On Resistance: <2.5Ω
- Total Power Dissipation: 150W
- Maximum Power Dissipation (Pd): 150
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 110 nS
- Drain-Source Capacitance (Cd): 190 pF
- Package: Â TO3P
