LF353 JFET Input Dual Operational Amplifier IC
TL071 Low Noise J-FET Single Operational Amplifier IC
- Supply Voltage Max: ±18V
- Input Voltage: ±15V
- Differential Input Voltage: ±30V
- Power Dissipation:Â 680mW
- Input Offset Voltage:Â 3mV
- Input Offset Current:Â 5pA
- Input Bias Current:Â 20pA
- Slew Rate: 16V/µs
- Package:Â DIP-8
- Low noise J-FET single operational amplifier
- Wide common-mode and differential voltage range
- Low input bias and offset current
- Output short-circuit protection
- Low harmonic distortion:0.01%
- Internal frequency compensation
TL081 JFET-Input Operational Amplifier IC
74LS321 Crystal-Controlled Oscillator IC
ULN2804 8-Channel Darlington Sink Driver IC
- 8-Channel Darlington Sink Driver
- High Sustaining voltage output: 50 V min
- Output Clamp Diodes
- Inputs compatible with various types of logic
- Output sustaining voltage:Â 0 to 50V
- Output Current Max:Â 500mA/ch
- Input Voltage:Â 0 to 30V
- Clamp diode reverse voltage:Â 50V
- Clamp diode forward current:Â 500mA
- Power Dissipation:Â 1.47W
- Eight Darlingtons with common emitters
- TTL, PMOS or CMOS Compatible inputs
- Clamp diodes for transient suppression
- Package:Â DIP18
480 MHz 2 Pin Crystal Oscillator
2SK791 N-Channel Mosfet Transistor 850V 3A
IRFZ48N Power Mosfet Transistor 55V 64A
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220