IRF9540N Power Mosfet Transistor -100V -23A
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
47uf 160V Samwha DC Electrolytic Capacitor
3SO880 STR 800V 8A
BT169DH Triac
MOQ: 5 nos
- Repetitive peak off-state voltage: 400V
- Non-repetitive peak on-state current: 8A
- RMS on-state current: 0.8A
- Gate trigger current: 50µA
- Holding current: 2mA
- Gate trigger voltage: 0.5V
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate
- Â Direct triggering from low power gate circuits and logic ICs
- Package: TO-92
47uf 250V DC Electrolytic Capacitor
IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
2N2222A NPN Metal Transistor 75V 0.8A
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation:Â 5W
- Transition Frequency:Â 500MHz
- Package:Â T0-39
80C52 Microcontroller IC
- Internal Memory
- ROM:8K x 8-bits
- RAM:256 x 8-bits
- External Memory Addressing
- Up to 64K Program Memory Space
- Up to 64K Data Memory Space
- Timer
- Two 16-bit Timer/Counters
- Interrupt Source
- Six Interrupt Sources
- Two-Level Interrupt priority
- Boolean Processor(Single-bit Logic)
- Full Duplex UART
- I/O ports
- Four 8-bit Ports
- Two Types of Power Saving Mode
- Idle Mode
- Power Down Mode
- Operating Volage:5V
- Operating Frequency:12MHz
- Package Type
- 40-pin PDIP
- Programmable clock out
- Â Asynchronous port reset
- Â Low EMI (inhibit ALE and slew rate controlled outputs)
- Â Wake-up from Power Down by an external interrupt
- CMOS and TTL compatible
- 4 level priority interrupt
- Memory addressing capability – 64k ROM and 64k RAM
