BC636 PNP Transistor -45V -1A
BC558 PNP Transistor -30V -0.1A
BC548 NPN Transistor 30V 0.1A
BC547 NPN Transistor 50V 0.1A
BEL 100N NPN Transistor 60V 1A
MOQ: 2 nos
- Type Designator: BEL100N
- Material of Transistor: Si
- Polarity: NPNMaximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO39
BC639 NPN Transistor 80V 1A
MOQ: 2 nos
- Collector-base Voltage:Â 80V
- Collector Current:Â 1A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 1W
- Transition Frequency:Â 200MHz
- Current Gain Min. :Â 40
- Package: T0-92
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
IRF9530 P-Channel Power Mosfet Transistor -100V -12A
IRF9540N Power Mosfet Transistor -100V -23A
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
47uf 160V Samwha DC Electrolytic Capacitor
3SO880 STR 800V 8A
BT169DH Triac
MOQ: 5 nos
- Repetitive peak off-state voltage: 400V
- Non-repetitive peak on-state current: 8A
- RMS on-state current: 0.8A
- Gate trigger current: 50µA
- Holding current: 2mA
- Gate trigger voltage: 0.5V
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate
- Â Direct triggering from low power gate circuits and logic ICs
- Package: TO-92