6 MHz 2 Pin Crystal Oscillator
MOQ: 3 nos
- Frequency: 6 MHz
- Mounting Type: DIP
- Number of Pins: 2
- Frequency Stability: +- 50ppm
- Frequency Tolerance: +- 30ppm
- Pin Length : 4mm / 0.15 inch
- Pin Distance: 5mm / 0.2 inch
- Capacitance: 10pF
- Total Size: 15.5x7.5x3.5mm / 0.6x0.3x0.13 inch (L*W*H)
- Working Temperature Range: -40℃ to 85℃ / -40℉ to 185
TOP222YN Off-line PWM Switch IC
- Supply Current: 1.2 mA
- Output Voltage: 5.7 V
- Power (Watts): 25W
- Output Current-Max: 0.5500 A
- Switching Frequency-Max: 110 KHz
- Lowest cost, lowest component count switcher solution.
- Cost competitive with linears above 5 W.
- Very low AC/DC losses – up to 90% efficiency.
- Built-in Auto-restart and Current limiting.
- Latching Thermal shutdown for system level protection.
- Circuit simplicity and Design Tools reduce time to market
- Package: TO-22
TNY279PN Off-line Switcher IC
- Drain Voltage: -0.3 to 700V
- Drain Peak Current: 1200mA
- ENABLE Voltage: -0.3 to 9V
- ENABLE Current: 100mA
- ON State Resistance (max): 4.5Ω
- Simple ON/OFF control, no loop compensation needed
- ON-time extension – extends low line regulation range/hold-up time to reduce input bulk capacitance
- Frequency jittering reduces EMI filter costs
- Pin-out simplifies heat sinking to the PCB
- SOURCE pins are electrically quiet for low EMI
- Package: DIP-8B
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220
FS5KM Power Mosfet Transistor 30V 5A
22uf 450V DC Electrolytic Capacitor
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
90NF03L N-Channel Power Mosfet Transistor 30V 90A
85T03GP N-Channel Power Mosfet Transistor 30V 75A
4N80 N-Channel Mosfet Transistor 800V 4A
- Designator: 4N80
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 106 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 4 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 75 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
- Package: TO-220
