4N60 N-Channel Mosfet Transistor 600V 2.6A
6N60C N-Channel Mosfet Transistor 600V 5.5A
BUZ91A N-Channel Mosfet Transistor 600V 8A
FS2KM Power Mosfet 600V 2A
CS4852 Multiplexer Demultiplexer IC
74LS245 Octal Bus Transceiver IC
- Technology Family: LS
- VCC (Min): 4.75V
- VCC (Max): 5.25V
- Bits (#): 8
- Voltage at nominal operation: 5V
- Frequency at normal voltage (Max): 35MHz
- ICC at normal voltage (Max): 0.09mA
- Propagation delay (Max): 8ns – 12ns
- 3-State Outputs to Drive Bus Lines Directly
- PNP Inputs Reduce DC Loading on Bus Lines
- Hysteresis at Bus Inputs Improves Noise Margins
- IOL (Max): 24mA
- IOH (Max): -15mA Rating: Catalog
- Operating temperature range: 0°C to 70°C
4UF 275VAC 400VDC MKP-X2 Induction cooker capacitor
- Capacitance: 4uf
- Voltage Rating: 400VDC - 275VAC
- Dielectric Type: Double Metallized PP
- Capacitance Tolerance: ± 5%
- Capacitor Case Style: Radial Box
- Dissipation Factor: ≤0.0008 at 10kHz
- Capacitor Terminals: Radial Leaded
- Operating Temperature Min: -55°C
- Operating Temperature Max: 105°C
- Automotive Qualification Standard
- High Accuracy, Long-Life Polyester Film Capacitor
- Low Leakage
- Easy Mounting
- Metallised polypropylene( MPP) film capacitor
- Non-inductive structure
- Automatic production to ensure stable quality
- Specially for the high frequency oscillating loop[circuit of induction heating device].
LF356 JFET Input Operational Amplifier IC
NE5532 Dual Low-Noise Operational Amplifier IC
UM93214A 1-memory Tone Pulse Dialer IC
- 1-memory Tone/Pulse Dialer
- Low standby current
- 3.58MHz crystal or ceramic resonator
- Calibrated DTMF timing for redialing
- Memory retention voltage Max:Â 5V
- Operation Current(Pulse):Â 0.2mA
- Operation Current(Tone):Â 0.6mA
- Memory retention current: 0.1µA
- System Frequency:Â 3.58MHz
- Pause Time:Â 2.2s
- Operating Voltage: 2.0V – 5.5V
- Operating Temperature Range:Â -200C to +750C
- Package:Â DIP-16
CD4038BE CMOS Triple Serial Adder IC
3N60 N-Channel Mosfet Transistor 600V 3A
- Type Designator: 8N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 75
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 50 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: Â TO-220F