55NF06 N-Channel Power Mosfet Transistor 60V 55A
6NK90 N-Channel Power Mosfet Transistor 900V 5.8A
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
IRF830 N-Channel Power Mosfet Transistor 500V 4.5A
2SK2645 N-Channel Mosfet Transistor 600V 9A
13N60 N-Channel Power Mosfet Transistor 650V 11A
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
7N80 N-Channel Mosfet Transistor 800V 6.6A
8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
