MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
IN6A4 Diode
DMV1500SD Dual Diode
- High breakdown voltage capability
- Â Very fast recovery diode
- Low static and peak forward voltage drop for low dissipation
- Insulated version:
- Â Insulated voltage = 2000 VRMS
- Â Capacitance = 7 pF
- Planar technology allowing high quality and best electrical characteristics
- Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
- Junction to case thermal resistance Rth(j-c): 4°C/W
- Storage temperature range Tstg: -40 to +150°C
- Maximum operating junction temperature Tj: 150°C
SB20100CT Dual Diode 20A 100V
- Maximum Recurrent Peak Reverse Voltage VRRMÂ =100V
- Operating and Storage Temperature Range TJ = -50 to +125 °C
- Maximum DC Blocking Voltage VDCÂ =100V
- Low power loss, high efficiency
- Low forward voltage, high current capability
- High surge capacity
- For use in low voltage, high frequency inverters free wheeling, and polarity protection applications
KBPC3510 Bridge Rectifier 35A 1000V
- Maximum peak recurrent reverse voltage: 1000V
- Maximum RMS bridge input voltage: 700V
- Maximum DC blocking voltage: 1000V
- Maximum forward rectified output current: 35V
- Peak forward surge current 8.3 ms half sine-wave superimposed on rated load: 400A
- Maximum forward voltage drop: 1.1V (per elements at 17.5A DC)
- Maximum DC reverse current at rated DC blocking voltage per elements: 10µA
- Rating for fusing (I2T, t<8.3ms): 664 A2sec
- Operating temperature: -55℃ to 150℃
- High current capability
- Surge overload rating: 400A peak
- High Efficiency
- Low Power Loss
- Low reverse leakage current
- Electrically isolated Metal case for Maximum Heat Dissipation
- High case dielectric strength
BY127 Diode
40HMR120 Metal Diode 40A 1200V
KBPC2510 Bridge Rectifier 25A 1000V
- Maximum Recurrent Peak Reverse Voltage Vrrm : 1000V
- Maximum RMS Voltage Vrms:Â 700V
- Maximum DC blocking Voltage Vdc:Â 1000V
- High current capability
- High Efficiency
- Low Power Loss
- Low reverse leakage current
- Electrically isolated Metal case for Maximum Heat Dissipation
- High case dielectric strengthPeak Reverse Volatge - 50V to 1000V
- Case to Terminal Isolation Volatge - 2500V
- Diffused Junction
TS4B05G Flat Bridge Rectifier 4A 50V
RU3 Diode
RH1 Diode
R2KN Diode
- Maximum Reverse Voltage, VRM: 140V
- Minimum Avalanche Breakdown Voltage at IZ = 1mA, VBR(min): 150V
- Maximum Avalanche Breakdown Voltage at IZ = 1mA, VBR(max): 170V
- Maximum Allowable Avalanche Current, IZSM: 1A
- High current capability
- High surge current capability
- High reliability
- Low reverse current
- Low forward voltage drop
- Fast switching for high efficiency