13N60 N-Channel Power Mosfet Transistor 650V 11A

13N60 Power Mosfet Transistor 500V 14A series designed as the Advanced N-Channel enhancement mode silicon gate power field effect transistor from International Rectifier utilize advanced processing techniques. These power MOSFET Transistors are designed explicitly to guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters. And also for applications with low on-resistance requirements. 13N60 manufactured in TO-220FP package that is universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 25 watts.

13N60 is simply a three-terminal silicon device, that offers a current conduction capability of about 11A, a fast switching speed. Moreover, it features low on-state resistance and a breakdown voltage rating of 650V. This power Mosfet device offers a wide range of applications in switched-mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits, and general-purpose switching applications. These resulting transistors exhibit extremely high packing density for low on-resistance. And also combined with the high switching speed and rugged device design Power MOSFETs provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.