20N60 Mosfet Transistor Small 600V 20A

20N60 provides a Drain Source Voltage 600V at a drain current 20A. These MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters. By providing low RDS(on), Ciss and Cross along with guaranteed avalanche capability these parts adopted quickly into new and existing offline power supply designs.

A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.