I am text block. Click edit button to change this text. Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo.
6N60C N-Channel Mosfet Transistor 600V 5.5A
₹45.00 Original price was: ₹45.00.₹40.00Current price is: ₹40.00. inc. GST
- N-Channel Mosfet
- Improved dv/dt capability
- 100% avalanche tested
- Fast switching
- Drain Current: ID= 5.5A at TC=25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 2 Ω
- Package: TO-220F
6N60C N-Channel Mosfet Transistor 600V 5.5A designed as the Advanced N-Channel enhancement mode silicon gate power field effect transistor. This high voltage MOSFET makes use of a complicated termination scheme to supply enhanced voltage-blocking capability without degrading performance over time. Additionally, this advanced MOSFET intended to withstand high energy in avalanche and commutation modes. This feature makes this device ideal high voltage, high speed switching applications in power supplies, converters and PWM motor controls. And also for applications with low on-resistance requirements. 6N60C manufactured in TO-220FP package that’s universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 25 watts.
6N60C is simply a three-terminal silicon device, that offers a current conduction capability of about 5.5A, fast switching speed. Moreover, it features low on-state resistance and a breakdown voltage rating of 600V. This power Mosfet device particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. These resulting transistor exhibit extremely high packing density for low on-resistance. And also combined with the high switching speed and rugged device design that Power MOSFETs provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.

Related products
25pcs Button Switch Kit
- Relative Humidity: 95%
- Rated Voltage: 12V
- Rated Current: 50 mA
- Contact resistance: 50M Ohm Max (initial)
- The insulation resistance: 100M Ohm minDC (250V)
- The compressive strength: AC250V (50/60Hz for 1 minute)
- Mechanical life: 100000 cycles
- The environment temperature: 25° ~ + 105°
- The operating strength: 180/250 (plus or minus 30gf)
- Dimension: 12 * 12 * 7.3 round convex type
- Total Buttons: 25pcs
- Colours: 5 (Black, Red, White, Blue, Yellow)
5 Pin RMC Connector
DC 50A 75mV Current Shunt Resistor for Amp Meter Gauge
Dual Micro USB 3.7v to 5V 2A Power Bank DIY 18650 LiPo Charger
- 4-level LED lamp display power, not working state intelligent automatic shutdown;
- The built-in lithium battery protection IC, over-current, under-voltage protection;
- Dual USB output ports.
- Dimensions: 68 x 34 x 9 mm (LxWxH)
- Weight: 10 gm
- Input port: MicroUSB (Andro)
- Input requirements: 5V constant voltage power supply can do charge input power, the most matching charger for 5v1a above
- Output port: USB
- Output parameters: 5V1A/5V2A
- Requirements for rechargeable batteries:
- Compatible Batteries: 18650 batteries, cell phone batteries, flat-panel batteries, MP3 batteries, etc. 3.7v-4.2V polymer Lithium battery,
IR LED Sensor
- Size: 5mm LED
- Wavelength: 940nm wavelength (most commonly used)
- Forward current (IF) is 100mA (normal condition) and 300mA (max.)
- 5A of surge forward current
- 24v to 1.4v of forward voltage
- Temperature : -40 to 100 ℃
- Soldering Temperature should not exceed 260 ℃
- Power Dissipation of 150mW at 25℃ (free-air temperature) or below
- Spectral bandwidth of 45nm
- Viewing angle: 30 to 40 degree
- High Reliability
- Excessive radiant intensity
- Having lead spacing of 2.54mm
- Easy to use with breadboard or perf board
SIM Card Holder
Solid State Relay Module SSR-25DA 25A /250V 3-32V DC Input 24-380VAC Output
- Control mode: DC-AC
- Input voltage: 3-32V DC.
- Output voltage: 24-380V AC.
- Output current: 25A.
- Working voltage: 250V.
- Material: plastic + metal.
- Environment temperature: -30 to +75
- Long service life and high reliability.
- Reduced electromagnetic interference.
- Highly reliable, compact size designed to offer users maximum simplicity.
- Dimension: 6. 5Cm x 4. 5Cm x 2. 2Cm

Reviews
There are no reviews yet.