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90NF03L N-Channel Power Mosfet Transistor 30V 90A
Original price was: ₹37.00.₹30.00Current price is: ₹30.00. inc. GST
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
Original price was: ₹38.00.₹30.00Current price is: ₹30.00. inc. GST
9N80 N-Channel Power Mosfet Transistor 800V 9A
Original price was: ₹60.00.₹55.00Current price is: ₹55.00. inc. GST
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
Description
These 9N80 N-Channel enhancement mode power field-effect transistors designed based on Silicon N Channel MOS Type. 9N80 is simply a three-terminal silicon device with, high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time. This advanced technology specially tailored to reduce and minimize on-state resistance while providing high rugged avalanche characteristics, and reliable, and fast switching performance. These devices are compatible for speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits based n half-bridge topology. Moreover, 9N80 feature minimum Lot-to-Lot variations for robust device performance and reliable operation.
9N80 N-Channel Mosfet Transistor manufactured in TO-220F package that is universally accepted for all commercial-industrial applications. 9N80 provides a Drain Source Voltage of 800V at a drain current 9A. These MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.
A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.
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