FS2KM Power Mosfet 600V 2A

These FS2KM N-Channel enhancement mode power field-effect transistors designed based on Silicon N Channel MOS Type. FS2KM  silicon device comes as a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time. This advanced technology specially tailored to reduce minimize on-state resistance while providing reliable, and fast switching performance. These devices are compatible with high-efficiency switching DC/DC converters, Power supply of printer, copier, HDD, FDD, TV, VCR .etc.

FS10KM Power Mosfet Transistor is simply a three-terminal silicon device, that offers a current conduction capability of about 2A, fast switching speed. Moreover, it features low on-state resistance, breakdown voltage rating of 600V, and max power dissipation of 30w. This power Mosfet device offers a wide range of applications in electronic ballast, and low power switching mode power appliances. These resulting transistor exhibit extremely high packing density for low on resistance. And also rugged avalanche characteristics and comparitively lower critical alignment steps. As a result, provides a remarkable manufacturing reproducibility.

A N-Channel MOSFET designed as a type of MOSFET in which the channel of the MOSFET composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. This is in contrast to the other type of MOSFET, which are P-Channel MOSFETs, in which the majority of current carriers are holes. There are 2 types of N-Channel MOSFETs, enhancement-type MOSFETs and depletion-type MOSFETs.

APPLICATIONS

• SMPS
• DC-DC Converter
• battery charger
• Power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.