IR2111 Half-Bridge Driver IC

The IR2111 designed as a high voltage, high-speed power MOSFET and IGBT driver comprises of dependent high and low side referenced output channels designed explicitly for half-bridge applications. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. This IC’s logic input is compatible with common CMOS outputs. The output drivers include a high-current pulse buffer stage that is meant to reduce driver cross-conduction. To avoid shoot-through in the output half-bridge, internal deadtime was used. The floating channel is utilized to drive a 600-volt Nchannel power MOSFET/IGBT in a high-side setup. In the meanwhile, it has a Gate drive supply voltage range of 10 to 20V. Furthermore, both channels of this gate driver IC include an Undervoltage lockout.. IR2111 Half-Bridge Driver IC manufactured in 8 pin-Lead PDIP or 8-Lead SOIC package.

The Half-Bridge Driver IC employed to drive the gates of high- and low-side N-channel MOSFETs (or IGBTs) with a low output impedance to reduce the conduction losses, and a fast switching time to reduce the switching losses. The high-and low-side drivers requires very close matching of the timing characteristics.  Thus allow accurate and efficient switching of the device. This minimizes the deadtime from one switch of the half-bridge turning off before the second switch turns on. Isolated half-bridge gate drivers widely utilized in many applications that range from isolated dc-to-dc power supply modules where high power density and efficiency are necessary, to solar inverters where high isolation voltage and long-term reliability are mandatory.