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MBR3045 Dual Diode
₹55.00 Original price was: ₹55.00.₹45.00Current price is: ₹45.00. inc. GST
- Maximum recurrent peak reverse voltage VRRM: 45V
- Maximum RMS Voltage VRMS: 31.5V
- Maximum DC blocking voltage VDC: 45V
- Power pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
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MBR3045 Dual Diode designed as a low voltage, high-frequency rectifier widely used for switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.Dual diode comes with two diodes in a single package. The dual diode is designed specifically for high speed switching application. It consists of two diodes connected in series and enclosed in a surface of SOT-23 mount package.
This dual diode operates on the Schottky Barrier principle with a platinum barrier metal. These diode defined as one of the common electronic components widely used in RF applications like mixer or detector diode. Due to its low forward voltage drop features makes crucial to lower levels of power loss contrasted to normal PN junction diodes. Thus makes it ideal for power applications like rectifiers.
In this schotkey diode, a connection formed between metal and semiconductor to form the Schottky barrier. In which the metal side functions as an anode and the n-type semiconductor works as a cathode. The forward voltage of the diode depends on the selection of a combination of the metal and semiconductor. Both p-type and n-type semiconductor can increase Schottky barriers. But p-type semiconductor has a low forward voltage contrast to the n-type semiconductor. As a forward voltage is inversely proportional to outflow current, that is if this voltage is low then the reverse outflow current is high which is not preferable. Hence, we are using n-type semiconductor material in this diode.

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