R2KN Diode

R2KN Diode designed as a low forward voltage drop, low reverse current, and a high surge current capability.This diode also known as the Avalanche Diode. Basically, these types of diodes have high current capacity and offers a maximum avalanche breakdown voltage of 170v at 1mA.  Its low forward voltage drop makes it ideal for reverse polarity protection circuits. It also features faster switching speeds and hence can be used in high-frequency switching circuits.

An avalanche designed as a semiconductor device specifically to experience avalanche breakdown at a specified reverse bias voltage. Normal diode permits flow of current easily in one direction, but severely restricts current from flowing in the opposite direction. But  in case of the avalanche diode, allows the current in both direction i.e. forward and reverse direction. But designed explicitly to operate in the reverse bias condition. The two terminals of the diode known as the anode and cathode. The most common applications of diode includes converting AC to DC, isolating signals from a supply, and mixing signals.

The 2 sides of the diode doped differently. One side is the “p-side”, this features a positive charge. The opposite side referred as the “n-side”, this has a negative charge. Both of these sides are layered together to form what is known as the “n-p junction” where they meet. The PN junction of an avalanche diode designed to prevent current concentration and resulting hot spots so that the diode remains undamaged by the avalanche breakdown. The figure below indicates the diode symbol: