4TR Heat Sink
3300uf 63V DC Electrolytic Capacitor
A3144 Hall Effect Sensor
- Digital Output Hall-effect sensor
- Operating voltage: 4.5V to 28V (typically 5V)
- Output Current: 25mA
- Can be used to detect both the poles of a magnet
- The output voltage is equal to operating voltage
- Operating temperature: -40°C to 85°C
- Turn on and Turn off time is 2uS each
- Inbuilt reverse polarity protection
- Suitable for Automotive and Industrial Applications
SIM Card Holder
Robot Wheel for Track Belt – 6mm Shaft 100 x 2mm Black
Dean Connector
- Male plug size: About 13* 7* 19mm
- Female plug size: About 13* 7* 15mm
- Current Rating: 30Amps
- Colour: Red and golden
- Material: Plastic and metal
- Provides a secure connection for battery and motor connections
- Eliminates the possibility of wrong polarity connections
- Used in RC hobby, car, boat, plane, helicopter, LIPO battery, etc.
- Dimension: 9x0.7x2cm
- Weight:20gm
ULTRASONIC SENSOR FIXING BRACKET
2SK903 N-Channel Power Mosfet Transistor 800V 3A
Mosfet 105N03
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 140 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
- Maximum Drain Current |Id|: 150 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 91 nS
- Drain-Source Capacitance (Cd): 400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
- Package:Â TO-220
IRF9640 P-Channel Power Mosfet Transistor -200V -11A
- P-Channel Power Mosfet
- Drain Current: ID= -11A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on)=500mΩ
- Power Dissipation:Â 125W
- Package: TO-220AB
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F