0.47uf 1KV DC Box Capacitor
- Capacitance: 0.47µF
- Voltage Rating: 1kV
- Dielectric Type: Double Metallized PP
- Capacitance Tolerance: ± 5%
- Product Range: PHE450 Series
- Capacitor Case Style: Radial Box
- Capacitor Terminals: Radial Leaded
- Lead Spacing: 27.5mm
- Operating Temperature Min: -55°C
- Operating Temperature Max: 105°C
- Automotive Qualification Standard
Motor Driver IC – L293D
- Can be used to run Two DC motors with the same IC.
- Speed and Direction control is possible
- Motor voltage Vcc2 (Vs): 4.5V to 36V
- Maximum Peak motor current: 1.2A
- Maximum Continuous Motor Current: 600mA
- Supply Voltage to Vcc1(vss): 4.5V to 7V
- Transition time: 300ns (at 5Vand 24V)
- Automatic Thermal shutdown is available
- Available in 16-pin DIP, TSSOP, SOIC packages
- Featuring Unit rode L293 and L293D
- Wide Supply-Voltage Range: 4.5 V to 36 V
- Separate Input-Logic Supply
- Internal ESD Protection
- Thermal Shutdown
- High-Noise-Immunity Inputs
- Output Current 1 A Per Channel (600 mA for L293D)
- Peak Output Current 2 A Per Channel (1.2 A for L293D)
- Output Clamp Diodes for Inductive Transient Suppression
XT60 Connector
- Manufacturer: AMASS
- Connector Series: XT60H
- Rated Voltage: DC 500V
- Metal Material: Brass Gold Plated
- Rated Current: 30A
- Momentary Current: 60A
- Number of pins: 2
- Colour: Yellow
- Contact Resistance: 0.55mΩ
- FR Level: UL94 V0
- Use Times: 1000 TIMES
- Temperature: -20℃ to 120℃
- Spatial Orientation Straight
- Compatible for Wire size up to 12AWG
- Mechanical mounting for cable
- Electrical mounting soldered
- Contact plating Gold flash
2 Pole Wire Connector Terminal Block
85T03GP N-Channel Power Mosfet Transistor 30V – 75A / SMD – TO-263
IC PT2314 SMD
- 4 stereo inputs with gain selection, range from 0dB to +11.25dB in 3.75dB/step
- Master volume from 0 dB to -78.75dB in 1.25dB/step
- Speaker attenuator for balance, range from 0dB to -38.75dB in 1.25dB/step
- Each channel output can be muted individually.
- Low frequency loudness compensation
- Bass and Treble control, range from -14dB to +14dB in 2dB/step
- Wide operation range (VDD=4V to 10V)
- Low harmonic distortion, low noise
- Improved and replace PT2314 and PT2314A
Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6
Mosfet 11N60 Small
- Type Designator: 11N60
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Extremely low gate charge (often Qg=40nC)
- A low effective output capacitance (typical Coss.eff=95pF)
TNY268PN Off-line Switcher IC
80C52 Microcontroller IC
- Internal Memory
- ROM:8K x 8-bits
- RAM:256 x 8-bits
- External Memory Addressing
- Up to 64K Program Memory Space
- Up to 64K Data Memory Space
- Timer
- Two 16-bit Timer/Counters
- Interrupt Source
- Six Interrupt Sources
- Two-Level Interrupt priority
- Boolean Processor(Single-bit Logic)
- Full Duplex UART
- I/O ports
- Four 8-bit Ports
- Two Types of Power Saving Mode
- Idle Mode
- Power Down Mode
- Operating Volage:5V
- Operating Frequency:12MHz
- Package Type
- 40-pin PDIP
- Programmable clock out
- Asynchronous port reset
- Low EMI (inhibit ALE and slew rate controlled outputs)
- Wake-up from Power Down by an external interrupt
- CMOS and TTL compatible
- 4 level priority interrupt
- Memory addressing capability – 64k ROM and 64k RAM
