IRF540N Power Mosfet Transistor 100V 33A
- Drain Current: ID = 33A at TC = 250C and VGS = 10V
- Gate-to-Source Voltage: VGS = ± 20 V
- Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
- VDSS: 100V
- Package: TO-220AB
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
VR4J Diode
RU3 Diode
RH1 Diode
R2KN Diode
- Maximum Reverse Voltage, VRM: 140V
- Minimum Avalanche Breakdown Voltage at IZ = 1mA, VBR(min): 150V
- Maximum Avalanche Breakdown Voltage at IZ = 1mA, VBR(max): 170V
- Maximum Allowable Avalanche Current, IZSM: 1A
- High current capability
- High surge current capability
- High reliability
- Low reverse current
- Low forward voltage drop
- Fast switching for high efficiency
MUR460 Power Rectifier
- Peak Repetitive Reverse Voltage: 600V
- Average Rectified Forward Current: 4A
- Non Repetitive Peak Surge Current: 110A
- Maximum Reverse Recovery Time: 75ns
- Maximum Forward Recovery Time: 50ns
- Ultrafast 25 ns, 50 ns and 75 ns Recovery Times
- 175°C Operating Junction Temperature
- Low Forward Voltage
- Low Leakage Current
- High Temperature Glass Passivated Junction
- These are Pb−Free Packages*
LED55C GaAs Infrared Emitting Diode IC
BYQ28E Dual Ultrafast Power Diode 200V 10A
BY399 Fast Recovery Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 800V
- Average Rectified Forward Current at TA = 500C, IO: 3A
- Peak Surge Forward Current, IFSM: 100A
- Fast recovery diodes
- Diffused junction
- High surge capability
- The plastic material carries U/L recognition 94V-0
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability