0.1uf 50V Samwah DC Electrolytic Capacitor
IRF1010E N-Channel Power Mosfet Transistor 60V 81A
- Type Designator: IRF1010E
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 170 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 10 V
- Maximum Drain Current |Id|: 81 A
- Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 130 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
- Power Dissipation: 170W
- Package: TO-220AB
FS5KM Power Mosfet Transistor 30V 5A
IRFP264N N-Channel Power Mosfet Transistor 250V 44A
2SK791 N-Channel Mosfet Transistor 850V 3A
BD136 PNP Transistor -45V -1.5A
OP07 Operational Amplifier IC
LF351 Wide Bandwidth JFET Input Operational Amplifier IC
CA3130A Operational Amplifier IC
74LS164 8-Bit Parallel-Out Serial-in Shift Register IC
- 8-Bit Parallel-Out Serial-in Shift Register
- High-level input voltage: 2V
- Low-level input voltage: 0.8V
- High-level output current: -400µA
- Low-level output current: 8mA
- Input clamp voltage: -1.5V
- Maximum clock frequency: 25MHz
- Propagation delay time max: 36ns
- Power dissipation: 400mW
- Supply voltage range: 4.75 to 5.25V
- Package: DIP-14
