IN6A4 Diode
DMV1500SD Dual Diode
- High breakdown voltage capability
- Â Very fast recovery diode
- Low static and peak forward voltage drop for low dissipation
- Insulated version:
- Â Insulated voltage = 2000 VRMS
- Â Capacitance = 7 pF
- Planar technology allowing high quality and best electrical characteristics
- Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
- Junction to case thermal resistance Rth(j-c): 4°C/W
- Storage temperature range Tstg: -40 to +150°C
- Maximum operating junction temperature Tj: 150°C
SB20100CT Dual Diode 20A 100V
- Maximum Recurrent Peak Reverse Voltage VRRMÂ =100V
- Operating and Storage Temperature Range TJ = -50 to +125 °C
- Maximum DC Blocking Voltage VDCÂ =100V
- Low power loss, high efficiency
- Low forward voltage, high current capability
- High surge capacity
- For use in low voltage, high frequency inverters free wheeling, and polarity protection applications
BY127 Diode
40HMR120 Metal Diode 40A 1200V
VR4J Diode
SB560 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
RU3 Diode
RH1 Diode
R2KN Diode
- Maximum Reverse Voltage, VRM: 140V
- Minimum Avalanche Breakdown Voltage at IZ = 1mA, VBR(min): 150V
- Maximum Avalanche Breakdown Voltage at IZ = 1mA, VBR(max): 170V
- Maximum Allowable Avalanche Current, IZSM: 1A
- High current capability
- High surge current capability
- High reliability
- Low reverse current
- Low forward voltage drop
- Fast switching for high efficiency
