BY299 Diode
MOQ : 3 nos
- Maximum Repetitive Reverse Voltage, VRRM:Â 800V
- Average Rectified Forward Current at TAÂ = 75oC, IO:Â 2A
- Peak Surge Forward Current, IFSM: 70A
- Case: DO-201AD Molded plastic
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Epoxy: UL94V-O rate flame retardant
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Lead: Axial lead solderable per MIL-STD-202, Method 208 guaranteed
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Polarity: Color band denotes cathode end
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High current capability
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High surge current capability
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High reliability
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 Low reverse current
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 Low forward voltage drop
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 Fast switching for high efficiency
RU3 Diode
IN5399 Diode
BYQ28E Dual Ultrafast Power Diode 200V 10A
MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
SB20100CT Dual Diode 20A 100V
- Maximum Recurrent Peak Reverse Voltage VRRMÂ =100V
- Operating and Storage Temperature Range TJ = -50 to +125 °C
- Maximum DC Blocking Voltage VDCÂ =100V
- Low power loss, high efficiency
- Low forward voltage, high current capability
- High surge capacity
- For use in low voltage, high frequency inverters free wheeling, and polarity protection applications
DMV32 Dual Diode
MUR1560 Dual diode
- Peak Repetitive Reverse Voltage VRRMÂ = 600V
- Average Rectified Forward Current at TC = 145°C, IF(AV): 15A
- Maximum Instantaneous Forward Voltage at iF = 15 Amps, TC = 25°C, VF: 1.5VPower pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
MBR3045 Dual Diode
- Maximum recurrent peak reverse voltage VRRM: 45V
- Maximum RMS Voltage VRMS: 31.5V
- Maximum DC blocking voltage VDC: 45V
- Power pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
LED55C GaAs Infrared Emitting Diode IC
DMV1500SD Dual Diode
- High breakdown voltage capability
- Â Very fast recovery diode
- Low static and peak forward voltage drop for low dissipation
- Insulated version:
- Â Insulated voltage = 2000 VRMS
- Â Capacitance = 7 pF
- Planar technology allowing high quality and best electrical characteristics
- Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
- Junction to case thermal resistance Rth(j-c): 4°C/W
- Storage temperature range Tstg: -40 to +150°C
- Maximum operating junction temperature Tj: 150°C
