Mosfet 15R1203
- Function : 1200V, 15A
- Reverse conducting IGBT / Reverse conducting IGBT
- Package: TO-247-3 Type
- Powerful monolithic body diode with a low forward voltage
- Designed for soft commutation only
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive
- temperature coefficient in VCEsat
- Low EMI
TL071 Low Noise J-FET Single Operational Amplifier IC
- Supply Voltage Max: ±18V
- Input Voltage: ±15V
- Differential Input Voltage: ±30V
- Power Dissipation:Â 680mW
- Input Offset Voltage:Â 3mV
- Input Offset Current:Â 5pA
- Input Bias Current:Â 20pA
- Slew Rate: 16V/µs
- Package:Â DIP-8
- Low noise J-FET single operational amplifier
- Wide common-mode and differential voltage range
- Low input bias and offset current
- Output short-circuit protection
- Low harmonic distortion:0.01%
- Internal frequency compensation