3SO880 STR 800V 8A
BT169DH Triac
MOQ: 5 nos
- Repetitive peak off-state voltage: 400V
- Non-repetitive peak on-state current: 8A
- RMS on-state current: 0.8A
- Gate trigger current: 50µA
- Holding current: 2mA
- Gate trigger voltage: 0.5V
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate
- Â Direct triggering from low power gate circuits and logic ICs
- Package: TO-92
47uf 250V DC Electrolytic Capacitor
IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
2N2222A NPN Metal Transistor 75V 0.8A
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation:Â 5W
- Transition Frequency:Â 500MHz
- Package:Â T0-39
80C52 Microcontroller IC
- Internal Memory
- ROM:8K x 8-bits
- RAM:256 x 8-bits
- External Memory Addressing
- Up to 64K Program Memory Space
- Up to 64K Data Memory Space
- Timer
- Two 16-bit Timer/Counters
- Interrupt Source
- Six Interrupt Sources
- Two-Level Interrupt priority
- Boolean Processor(Single-bit Logic)
- Full Duplex UART
- I/O ports
- Four 8-bit Ports
- Two Types of Power Saving Mode
- Idle Mode
- Power Down Mode
- Operating Volage:5V
- Operating Frequency:12MHz
- Package Type
- 40-pin PDIP
- Programmable clock out
- Â Asynchronous port reset
- Â Low EMI (inhibit ALE and slew rate controlled outputs)
- Â Wake-up from Power Down by an external interrupt
- CMOS and TTL compatible
- 4 level priority interrupt
- Memory addressing capability – 64k ROM and 64k RAM
2N3906 PNP Transistor 40V 0.2A
2N6288 NPN Transistor 40V 7A
LM1207N RGB Video Amplifier IC
- Supply Voltage (VCC) 10.8V s VCC s 13.2V
- Supply Voltage (VCC) 15V
- Peak Video Output Source Current 28 mA
- Â Power Dissipation (PD) Â 2.5W
- Temperature Range b20 degree C to 80 degree C
- RGB Video Amplifier System with Blanking
- Matched (±0.1 dB or 1.2%) attenuators for contrast control
- Three externally gated single ended input comparators for cutoff and brightness control
- 0V to 4V, high input impedance DC contrast control (>40 dB range)
- 0V to 4V, high input impedance DC drive control for each video amplifier (-6 dB to 0 dB range)
- Spot killer, blanks output when VCC <10.6V
- Capable of 7 VPPÂ output swing (slight reduction in bandwidth)
- Output stage blanking
- Output stage directly drives most hybrid or discrete CRT drivers
BC109 NPN Transistor 30V 0.1A
- Model: BC109
- Type: bipolar
- Polarity: NPN
- Operating frequency: 100 MHz
- Collector-emitter voltage max: 20 V
- Emitter-base voltage max: 5 V
- Collector-base voltage max: 30 V
- Continuous collector current: 0.1 A
- Collector cut-off current: 15 nA
- Power: 0.3 W
- Maximum operating temperature: 150°C
- Case: TO-18
- Mounting: THT, PCB
