47N60 Mosfet Transistor 650V 47A
3N60 N-Channel Mosfet Transistor 600V 3A
- Type Designator: 8N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 75
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 50 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: Â TO-220F
40T03GP N-Channel Power Mosfet Transistor 30V 28A
2N5298 NPN Transistor 80V 4A
- Collector-base Voltage:Â 80V
- Collector Current:Â 4A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 36W
- Current Gain min.:Â 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package:Â T0-220
IRFZ48N Power Mosfet Transistor 55V 64A
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