2SK3561 N-Channel Mosfet Transistor 500V 8A
2SK791 N-Channel Mosfet Transistor 850V 3A
2SK792 N-Channel Mosfet Transistor 900V 3A
2SK793 N-Channel Mosfet Transistor 850V 5A
- N-Channel Mosfet
- Drain Current: 5A
- Drain Source Voltage: Â 850V
- Static Drain-Source On Resistance: <2.5Ω
- Total Power Dissipation: 150W
- Maximum Power Dissipation (Pd): 150
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 110 nS
- Drain-Source Capacitance (Cd): 190 pF
- Package: Â TO3P
2SK794 N-Channel Mosfet Transistor 900V 5A
2SK903 N-Channel Power Mosfet Transistor 800V 3A
2SK954 N-Channel Power Mosfet Transistor 800V 3A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on Time (ton): 60 nS
- Drain-Source Capacitance (Cd): 90 p
- Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
- Package:Â TO3P
2SK956 N-Channel Power Mo9Asfet Transistor 800V
2TR Heat Sink
2uf 275V DC Induction Capacitor
- Capacitance: 2uf
- Voltage Rating: 275VAC - 400VDC
- Dielectric Type: Double Metallized PP
- Capacitance Tolerance: ± 5%
- Capacitor Case Style: Radial Box
- Dissipation Factor: ≤0.0008 at 10kHz
- Capacitor Terminals: Radial Leaded
- Operating Temperature Min: -55°C
- Operating Temperature Max: 105°C
- Automotive Qualification Standard
- High Accuracy, Long-Life Polyester Film Capacitor
- Low Leakage
- Easy Mounting
- Metallised polypropylene( MPP) film capacitor
- Non-inductive structure
- Automatic production to ensure stable quality
- Specially for the high frequency oscillating loop[circuit of induction heating device].
2X062H Microwave Oven Diode
- Rectifier Diode
- Fit for: Microwave Oven
- Type: Dual Way
- Model: 2x062H
- Lead Size: 35 x 7mm
- Main Body Size: 20 x 5 x 7mm
- Material: Plastic, Metal
- Net Weight: 37g
- Color: Black, Silver
- Storage Temperature TSTGÂ = -40 to +30oRectifier Diode
- Junction Temperature Tj = 130oC
- High Temperature Reverse Leakage Current at TA=125°C, IR = 100µA
