470uf 250V DC Electrolytic Capacitor
150uf 420V DC Electrolytic Capacitor
470uf 200V DC Electrolytic Capacitor
220uf 400V DC Electrolytic Capacitor
TNY266PN Off-line Switcher IC
4N80 N-Channel Mosfet Transistor 800V 4A
- Designator: 4N80
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 106 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 4 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 75 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
- Package: TO-220
CM8870 ISO2 CMOS Integrated DTMF Receiver IC
74LS25 Dual 4-Input NOR Gate IC
- Dual 4-Input NOR Gates With Strobe
- High-level input voltage:Â 2V
- Low-level input voltage:Â 0.8V
- High-level output current:Â -0.8mA
- Low-level output current:Â 16mA
- No. of gates:Â 2
- No. of inputs:Â 4
- No. of outputs:Â 1
- Propagation delay time:Â 22ns
- Package:Â DIP-14
- Output type: Push-Pull
- Max Speed: (tpd 10-50ns)
- Max Data rate: 70Mbps
- Rating: Catalog
- Operating temperature range: 0°C to 70°C
2SK2996 N-Channel Mosfet Transistor 600V 10A
DMV1500SD Dual Diode
- High breakdown voltage capability
- Â Very fast recovery diode
- Low static and peak forward voltage drop for low dissipation
- Insulated version:
- Â Insulated voltage = 2000 VRMS
- Â Capacitance = 7 pF
- Planar technology allowing high quality and best electrical characteristics
- Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
- Junction to case thermal resistance Rth(j-c): 4°C/W
- Storage temperature range Tstg: -40 to +150°C
- Maximum operating junction temperature Tj: 150°C
