LM338K 5-Amp Adjustable Regulator IC
15N120 IGBT 1200V 15A
- Collector-Emitter Voltage, VCES: 1200V
- Gate-Emitter Voltage, VGES: ±20V
- Collector Current IC (@ TC = 250C): 30A
- Saturation Voltage: VCE(sat), typ: 1.9 V
- Package: TO-3P
- 1200 V, 15 A NPT Trench IGBT
- NPT Trench Technology, Positive temperature coefficient
- Extremely Enhanced Avalanche Capability
- Low Saturation Voltage
12V DC Pump
74121 Monostable Multivibrator with Schmitt-Trigger Input
IR2111 Half-Bridge Driver IC
- Half-Bridge Driver
- High Side Floating Supply Voltage: 625V
- High Level Output Voltage Max.:100mV
- Low Level Output Voltage Max.: 100mV
- Logic 1 Input Bias Current Max.: 40µA
- Logic 0 Input Bias Current Max.: 1µA
- Total Power Dissipation:1W
- Rise Time Max. : 130ns
- Fall Time Max.: 65ns
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with input
- Package: DIP-8
2SK2233 N-Channel Mosfet Transistor 60V 45A
SUBMERSIBLE MINI WATER PUMP
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
IRFP260N N-Channel Power Mosfet Transistor 200V 49A
KBPC2510 Bridge Rectifier 25A 1000V
- Maximum Recurrent Peak Reverse Voltage Vrrm : 1000V
- Maximum RMS Voltage Vrms: 700V
- Maximum DC blocking Voltage Vdc: 1000V
- High current capability
- High Efficiency
- Low Power Loss
- Low reverse leakage current
- Electrically isolated Metal case for Maximum Heat Dissipation
- High case dielectric strengthPeak Reverse Volatge - 50V to 1000V
- Case to Terminal Isolation Volatge - 2500V
- Diffused Junction
