5N90 N-Channel Mosfet Transistor 900V 3A
IRF840 N-Channel Mosfet Transistor 500V 8A
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
BFW10 N-Channel FET 30V 20mA
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
