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13N60 N-Channel Power Mosfet Transistor 650V 11A

₹70.00 inc. GST
  • N-Channel Power Mosfet
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Drain Current: ID= 11A at TC= 25℃
  • Drain Source Voltage: VDSS = 650V
  • Static Drain-Source On-Resistance: RDS(on) < 0.36Ω
  • Total Power Dissipation: 25W
  • Package: TO-220FP
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2SK1535 N-Channel Power Mosfet Transistor 900V 3A

₹185.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: 5A
  • Drain Source Voltage: 900V
  • Static Drain-Source On-Resistance: <2.8Ω
  • Drain Power Dissipation: 125W
  • Package: TO-220
  • Fast Switching Speed
  • Minimum Lot-to-Lot variations for robust device
    performance and reliable operation
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2SK3264 N-Channel Power Mosfet Transistor 800V 7A

₹40.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: 7A
  • Drain Source Voltage: 800V
  • Static Drain-Source On-Resistance: <2Ω
  • Maximum Power Dissipation: 60W
  • Package: TO-220
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40N03GP N-Channel Power Mosfet Transistor 30V 40A

₹70.00 inc. GST
  • N-Channel Power Mosfet
  • Simple Drive Requirement
  • Fast Switching Characteristic
  • Drain-Source Voltage: VDSS = 30V
  • Gate-Source Voltage: VGS = ±20V
  • Drain current: ID = 40A at TC = 250C
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40T03GP N-Channel Power Mosfet Transistor 30V 28A

₹70.00 inc. GST
  • N-Channel Power Mosfet
  • Drain-Source Voltage: VDSS = 30V
  • Gate-Source Voltage: VGS = ±25V
  • Drain current: ID = 28A at TA = 250C
  • Low Gate Charge
  • Fast Switching
  • RoHS Compliant
  • Package: TO-220
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60NF06 N-Channel Power Mosfet Transistor 60V 60A

₹28.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 60A at TC= 25℃
  • Drain Source Voltage: VDSS = 60V
  • Static Drain-Source ON Resistance: <0.016Ω
  • Total Power Dissipation: 110W
  • Package: TO-220
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6NK90 N-Channel Power Mosfet Transistor 900V 5.8A

₹48.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 5.8A at TC= 25℃
  • Drain Source Voltage: VDSS = 900V
  • Static Drain-Source On Resistance: 2Ω
  • Total Power Dissipation: 30W
  • Package: TO-220FP
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70N10 N-Channel Power Mosfet Transistor 100V 65A

₹135.00 inc. GST
  • N-Channel Power Mosfet
  • Exceptional dv/dt capability
  • Extremely low on-resistance RDS(on)
  • 100% avalanche tested
  • Drain Current: ID= 65A at TC= 25℃
  • Drain Source Voltage: VDSS = 100V
  • Static Drain-Source On-Resistance: RDS(on) < 0.0195 Ω
  • Total Power Dissipation: 150W
  • Package: TO-247
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7N90 N-Channel Power Mosfet Transistor 900V 7A

₹65.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 7A at TC=25℃
  • Drain Source Voltage: VDSS = 900V
  • Static Drain Source On-Resistance: 1.8Ω
  • Power Dissipation: 52W
  • Package: TO-220
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85T03GP N-Channel Power Mosfet Transistor 30V 75A

₹70.00 inc. GST
  • N-Channel Power Mosfet
  • Low Gate Charge
  • Fast Switching
  • Simple Drive Requirement
  • Drain-Source Voltage: VDSS = 30V
  • Gate-Source Voltage: VGS = ±20V
  • Drain Current: ID = 75 A at TC = 250C
  • Package: TO-220
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8N60 N-Channel Power Mosfet Transistor 600V 7.5A

₹65.00 inc. GST
  • N-Channel Power Mosfet
  • Ultra low gate charge ( typical 28 nC )
  • Low reverse transfer capacitance ( Crss = typical 12.0 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • Drain Current: ID= 7.5A at TC= 25℃
  • Drain Source Voltage: VDSS = 600V
  • Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
  • Package: TO-220F
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90NF03L N-Channel Power Mosfet Transistor 30V 90A

₹30.00 inc. GST
  • N-Channel Power Mosfet
  • Typical RDS(on): 0.0056Ω
  • Typical Qg: 35 nC at 5V
  • Drain-source Voltage: VDSS = 30 V
  • Gate- source Voltage: VGS = ±20 V
  • Drain Current: ID = 90 A at TC = 250C
  • Pulsed drain current: 360A
  • Total dissipation at 25℃: 150W
  • Operating temperature: -65℃ to 175℃
  • Package: TO-220
 
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9N80 N-Channel Power Mosfet Transistor 800V 9A

₹55.00 inc. GST
  • N-Channel Power Mosfet
  • Type Designator: 9N80
  • Maximum Power Dissipation (Pd): 147W
  • Maximum Drain-Source Voltage |Vds|: 800 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 9 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 37 nS
  • Drain-Source Capacitance (Cd): 195 pF
  • Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
  • Power Dissipation: 49W
  • Package: TO-220F
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FS10KM Power Mosfet 60V 10A

₹60.00 inc. GST
  • Package: TO-220FN
  • N-Channel Power MOSFET
  • Drain-Source Voltage: 60V
  • Drain Current: 10A
  • Maximum Power Dissipation: 20W
  • Static Drain-Source On Resistance Max.: 78Ω
  • Dynamic dV/dt Rating
  •  175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
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FS2KM Power Mosfet 600V 2A

₹40.00 inc. GST
  • N-Channel Power MOSFET
  • Drain-Source Voltage: 600V
  • Gate-Source Voltage: ±30V
  • Drain Current: 2A
  • Maximum Power Dissipation: 30W
  • Gate-Source Threshold Voltage: 3V
  • Drain-Source On-State Resistance: 6.4Ω
  • Drain-Source On-State Voltage: 5V
  • Package: TO-220FN
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FS5KM Power Mosfet Transistor 30V 5A

₹40.00 inc. GST
  • N-Channel Power  Mosfet
  • Gate-source voltage: ±30V
  • Drain current: 5A
  • Maximum power dissipation: 30W
  • Gate-source threshold voltage: 3V
  • Package: TO-220FN
 
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G15N60 N-Channel Power Mosfet Transistor 600V 15A

₹110.00 inc. GST
  • N-Channel Power Mosfet
  • Type Designator: 15N60
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 312 W
  • Maximum Drain-Source Voltage |Vds|: 600 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Drain Current |Id|: 15 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 200 nS
  • Drain-Source Capacitance (Cd): 270 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
  • Power Dissipation: 38.5W
  • Package: TO-220
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IRF1010E N-Channel Power Mosfet Transistor 60V 81A

₹40.00 inc. GST
  • Type Designator: IRF1010E
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 170 W
  • Maximum Drain-Source Voltage |Vds|: 60 V
  • Maximum Gate-Source Voltage |Vgs|: 10 V
  • Maximum Drain Current |Id|: 81 A
  • Junction Temperature (Tj): 150 °C
  • Total Gate Charge (Qg): 130 nC
  • Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
  • Power Dissipation: 170W
  • Package: TO-220AB
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IRF3205 N-Channel Power Mosfet Transistor 55V 98A

₹35.00 inc. GST
N-Channel Power Mosfet Drain Current: ID= 98A at TC= 25℃ Drain Source Voltage: VDS = 55V Static Drain-Source On-Resistance:  RDS(on) =8mΩ Power
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IRF3415 N-Channel Power Mosfet Transistor 150V 43A

₹55.00 inc. GST
FEATURES: N-Channel Power Mosfet Dynamic dv/dt Rating 1750C Operating Temperature Fast Switching SPECIFICATIONS: Drain Current: ID= 43A at TC=25℃ Drain
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IRF3710 N-Channel Power Mosfet Transistor 100V 57A

₹40.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 57A at TC= 25℃
  • Drain Source Voltage:VDS = 100V
  • Static Drain-Source On-Resistance:  RDS(on)=23mΩ
  • Power Dissipation: 200W
  • Package: TO-220AB
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IRF530 N-Channel Power Mosfet Transistor 100V 14A

₹30.00 inc. GST
  • Type Designator: IRF530
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 90 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 16 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 26 nC
  • Drain-Source Capacitance (Cd): 900 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
  • Package: TO220
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IRF540N Power Mosfet Transistor 100V 33A

₹30.00 inc. GST
  • Drain Current: ID = 33A at TC = 250C and VGS = 10V
  • Gate-to-Source Voltage: VGS = ± 20 V
  • Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
  • VDSS: 100V
  • Package: TO-220AB
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
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IRF620 N-Channel Power Mosfet Transistor 200V 5.2A

₹30.00 inc. GST
  • N-Channel Power Mosfet
  • Low RDS(ON)
  • Low Drive Requirements
  • Ease of Paralleling
  • Drain Current: ID= 5.2A at TC= 25℃
  • Drain Source Voltage: VDS = 200V
  • Static Drain-Source On-Resistance:  RDS(on) =0.8 Ω
  • Power Dissipation: 50W
  • Package: TO-220AB
 
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IRF630 N-Channel Power Mosfet Transistor 200V 9A

₹22.00 inc. GST
Very low intrinsic capacitances SPECIFICATIONS: Drain-source Voltage: VDSS (VGS = 0) = 200V Gate- source Voltage: VGS = ± 20 V Drain Current:
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IRF730 N-Channel Power Mosfet Transistor 400V 5.5A

₹35.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Source Voltage: 400V
  • Drain Current: ID = 5.5A at TC = 25oC
  • Static Drain-to-Source On-Resistance: RDS(on) = 1000 mΩ
  • Qg Typical: 25.3Nc
  • Package: TO-220AB
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Compliant to RoHS directive 2002/95/EC
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IRF740 Power Mosfet Transistor 400V 10A

₹40.00 inc. GST
  • Power Mosfet
  • Dynamic dv/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Drain Current: ID= 10A at TC=25℃
  • Drain Source Voltage: VDSS = 400V
  • Static Drain-Source On-Resistance: RDS(on) < 0.55Ω
  • Power Dissipation: 125W
  • Package: TO-220AB
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IRF830 N-Channel Power Mosfet Transistor 500V 4.5A

₹24.00 inc. GST
N-Channel Power Mosfet Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching SPECIFICATIONS: Drain Current: ID= 4.5A at TC=25℃ Drain Source
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IRF9530 P-Channel Power Mosfet Transistor -100V -12A

₹30.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -12A at TC=25℃
  • Drain Source Voltage: VDS = -100V
  • Static Drain-Source On-Resistance: RDS(on)=300mΩ
  • Power Dissipation: 88W
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Package: TO-220AB
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IRF9540N Power Mosfet Transistor -100V -23A

₹40.00 inc. GST
  • Drain Source Voltage: -100V
  • Drain Current: -23A
  • Power Dissipation: 140W
  • Static Drain-to-Source On-Resistance: RDS(on): 0.117Ω
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
  • Package: TO-220
 
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IRF9610 P-Channel Power Mosfet Transistor -200V -1.8A

₹45.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -1.8A at TC=25℃
  • Drain Source Voltage: VDS = -200V
  • Static Drain-Source On-Resistance:  RDS(on)=3000mΩ
  • Power Dissipation: 20W
  • Package: TO-220AB
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IRF9640 P-Channel Power Mosfet Transistor -200V -11A

₹55.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -11A at TC=25℃
  • Drain Source Voltage: VDS = -200V
  • Static Drain-Source On-Resistance: RDS(on)=500mΩ
  • Power Dissipation: 125W
  • Package: TO-220AB
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-free Available
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IRFBC40 N-Channel Power Mosfet Transistor 600V 2A

₹45.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: 2A
  • Drain Source Voltage: 600V
  • Static Drain-Source On-Resistance: <1.2Ω
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC
  • Total Power Dissipation: 125W
  • Package: TO-220
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IRFP054 N-Channel Power Mosfet Transistor 60V 70A

₹280.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 70A at TC= 25℃
  • Drain Source Voltage: VDS = 60V
  • Static Drain-Source On-Resistance: RDS(on)= 14mΩ
  • Power Dissipation: 230W
  • Package: TO-247AC
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IRFP064 N-Channel Power Mosfet Transistor 60V 70A

₹280.00 inc. GST
  • N-Channel Power Mosfet
  • Designator: IRFP064
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 300 W
  • Maximum Drain-Source Voltage |Vds|: 60 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 70 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 190(max) nC
  • Rise Time (tr): 190 nSDrain-Source
  • Capacitance (Cd): 3200 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
  • Drain Current: ID= 70A at TC=25℃
  • Drain Source Voltage: VDS = 60V
  • Static Drain-Source On-Resistance:  RDS(on)=9mΩ
  • Power Dissipation: 300W
  • Package: TO-247AC
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IRFP150 Power Mosfet Transistor 100V 41A

₹75.00 inc. GST
  • Power  Mosfet
  • Dynamic dv/dt Rating
  • Drain Current: ID= 41A at TC=25℃
  • Drain Source Voltage: VDSS = 100V
  • Static Drain-Source On-Resistance: RDS(on) = 0.055 Ω
  • Power Dissipation: 230W
  • 175°C Operating Temperature
  • Fast Switching
  • Package: TO-247AC
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