BC327 PNP Transistor -50V -800mA
- VCBO Collector-Base Voltage (IE=0) : -50 V
- VCEO Collector-Emitter Voltage (IB=0) : -45 V
- VEBO Emitter-Base Voltage (IC=0) : -5 V
- IC Collector Current : -0.5 A
- ICM Collector Peak Current : -1 A
- Ptot Total Dissipation at TC = 25oC : 625 mW
- Tstg Storage Temperature : -65 to 150 oC
- Tj Max. Operating Junction Temperature : 150 oC
- Rthj-amb Thermal Resistance Junction-Ambient Max : 200 oC/W
- Rthj-case Thermal Resistance Junction-Case Max : 83.3 oC/W
2SC5589 NPN Transistor 1500V 18A
- Type Designator: 2SC5589
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 200 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 2 MHz
- Collector Capacitance (Cc): 240 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: 2-21F2A
13N60 N-Channel Power Mosfet Transistor 650V 11A
IRF9640 P-Channel Power Mosfet Transistor -200V -11A
- P-Channel Power Mosfet
- Drain Current: ID= -11A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on)=500mΩ
- Power Dissipation:Â 125W
- Package: TO-220AB
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
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