2N3055 NPN Power Transistor 100V 15A

This 2N3055 NPN bipolar transistor designed explicitly for use in general-purpose low power silicon NPN bipolar junction transistors. The 2N3055 offers exceptional high gain performance along with a very low saturation voltage. 2N3055 comes in a three terminal NPN device within the working range. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Transistors defined as the most critical device in electronics circuit. An NPN transistor consists of a P-type silicon (the base) material sandwiched between two pieces of N-type (the collector and emitter). These transistor used specifically to pass electrons from the emitter to the collector (so conventional current flows from collector to emitter). The emitter “emits” electrons into the base, which controls the number of electrons the emitter emits. In the base these electrones combine with the holes and fed to the collector.  Most of the electrons emitted “collected” by the collector, which sends them along to the next part of the circuit.

The NPN transistor function to amplify weak signal enters into base and produces strong amplify signals at collector end. In NPN transistor, the direction of movement of an electron is from the emitter to collector region due to which the current constitutes in the transistor. Such type of transistor widely used in circuit because their majority charge carriers are electrons that offers high mobility compared to holes. The NPN transistor has three terminals, namely emitter, collector and base. The centre section of NPN transistor lightly doped, and it exist as the most important factor for working of transistor. Meanwhile, the emitter doped moderately, and the collector heavily doped