2N7000 N-Channel Mosfet Transistor 60V 200mA

2N7000 provides a Drain Source Voltage 60V at a drain current 200mA. These MOSFET Transistors designed explicitly to achieve extremely low-voltage, low-current applications. This feature makes this device ideal for use as a Power MOSFET Gate Drivers and Switching Application. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts adopted quickly into new and existing offline power supply designs.

A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET in which the channel of the MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.

Applications

• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Assorted Switching Application
• Switching High voltage loads
• Commonly used for small signal switching
• LED dimmers or flashers
• Low power Analog converters or inverters