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2N5298 NPN Transistor 80V 4A
Original price was: ₹22.00.₹15.00Current price is: ₹15.00. inc. GST
40T03GP N-Channel Power Mosfet Transistor 30V 28A
Original price was: ₹79.00.₹70.00Current price is: ₹70.00. inc. GST
3N60 N-Channel Mosfet Transistor 600V 3A
Original price was: ₹44.00.₹40.00Current price is: ₹40.00. inc. GST
- Type Designator: 8N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 75
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 50 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: Â TO-220F
Description
These 3N60 N-Channel enhancement mode power field-effect transistors designed based on Silicon N Channel MOS Type. 3N60 Â is simply a three-terminal silicon device with, high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time. This advanced technology specially tailored to reduce minimize on-state resistance while providing high rugged avalanche characteristics, reliable, and fast switching performance. These devices are compatible for speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits based n half-bridge topology. Moreover, 3N60 feature minimum Lot-to-Lot variations for robust device performance and reliable operation.
3N60 N-Channel Mosfet Transistor manufactured in TO-220F package that is universally accepted for all commercial-industrial applications. 3N60 provides a Drain Source Voltage of 600V at a drain current 3A. These MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.
A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.
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