I am text block. Click edit button to change this text. Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo.
47N60 Mosfet Transistor 650V 47A
₹212.00 Original price was: ₹212.00.₹200.00Current price is: ₹200.00. inc. GST
- New revolutionary high voltage technology
- Worldwide best RDS(on) in TO 247
- Ultra low gate charge
- Periodic avalanche rated
- Drain Current: ID= 47A at TC=25℃
- Drain Source Voltage:Â VDSÂ = 650V
- Static Drain-Source On-Resistance: RDS(on) < 0.07 Ω
- Package: TO-247
Out of stock
These 47N60 N-Channel enhancement mode power field-effect transistors designed based on Silicon N Channel MOS Type. 47N60 Â is simply a three-terminal silicon device with, high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time. This advanced technology specially tailored to reduce minimize on-state resistance while providing high rugged avalanche characteristics, reliable, and fast switching performance. These devices are compatible for speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits based n half-bridge topology. Moreover, 47N60 feature minimum Lot-to-Lot variations for robust device performance and reliable operation.
47N60 N-Channel Mosfet Transistor manufactured in TO-47 package that is universally accepted for all commercial-industrial applications. 47N60 provides a Drain Source Voltage of 650V at a drain current 47A. These MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.
A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.

Related products
25pcs Button Switch Kit
- Relative Humidity: 95%
- Rated Voltage: 12V
- Rated Current: 50 mA
- Contact resistance: 50M Ohm Max (initial)
- The insulation resistance: 100M Ohm minDC (250V)
- The compressive strength: AC250V (50/60Hz for 1 minute)
- Mechanical life: 100000 cycles
- The environment temperature: 25° ~ + 105°
- The operating strength: 180/250 (plus or minus 30gf)
- Dimension: 12 * 12 * 7.3 round convex type
- Total Buttons: 25pcs
- Colours: 5 (Black, Red, White, Blue, Yellow)
4 Pin RMC Connector
5-36v Switch Drive High-power MOSFET Trigger Module
- Operating Voltage: DC 5V - 36V;
- The trigger source: digital high-low (DC3.3V - 20V), can be connected microcontroller IO port, PLC interfaces, DC power, you can access the PWM signal, the signal frequency 0--20KHZ perfect support.
- Output capacity: DC 5V - 36V, at room temperature, continuous current 15A, power 400W! Lower auxiliary cooling conditions, the maximum current up to 30A.
- Applications: You can control the output of power equipment, motors, light bulbs, LED lights, DC motors, micro-pumps, solenoid valves, etc.. You can enter
- PWM, motor speed control, lamp brightness.
- Availability: unlimited switch
- Operating temperature: -40-85
- Dimension: 34mm x 17mm x 12mm
- The use of imported dual-MOS parallel active output, lower resistance, more current, strong power at room temperature, 15A, 400W, to meet the most use of the equipment
- Wide voltage, the perfect support for PWM
- Easily control high power devices
- Input PWM to achieve motor speed control, lamp brightness control
650NM Laser Diode
- Wavelength: 650nm
- Output optical power: 5mW
- Operating voltage: 5V
- Operating current: ~30mA
- Input current: 30mA
- Housing material: Copper
- Power lead length: 120mm.
- Transmit power: 58mW
- Spot: size 10mm to 15mm at 15meters
- Life span more than 2000 hours
- Driver circuit: APC circuit
- Small size
- Cost-effective
- Breadboard friendly
- Operating temperature -10°C to 40°C
- Dimension: :15mm x 6mm
- Weight: 10 grams
ADXL 335 Accelerometer IC
- 3-axis sensing
- Small, low profile package
- 4 mm × 4 mm × 1.45 mm LFCSP
- Low power : 350 μA (typical)
- Single-supply operation: 1.8 V to 3.6 V
- 10,000 g shock survival
- Excellent temperature stability
- BW adjustment with a single capacitor per axis
- RoHS/WEEE lead-free compliant
- 8V- 3.6V single-supply operation
- Integrated X, Y, and Z axis accelerometer on a single chip
- X and Y axis has a 0.5Hz to 1600Hz bandwidth
- Z axis has a 0.5Hz to 550Hz bandwidth
- Hermetically sealed for temp and humidity resistance
DC 50A 75mV Current Shunt Resistor for Amp Meter Gauge
GSM Antenna Dlenp 2dbi/3dbi Patch Antenna with SMA Male Connector
- GSM Antenna
- Gain: 2 to 3dbi
- Wire Length: 3 metre
- 3dbi Sticker Antenna
- GSM Antenna
- SMA Male Connector
- Frequency Range(MHz): 824-960/1710-1990Mhz
- Bandwidth (MHz): 136/280
- VSWR≤1.5
- Gain(dB): 2-3dbi
- Max Input power(W): 60W
- Input Impedance: 50 Ω
- Polarization Type: Vertical
- Cable Type: RG174
- Mounting Adhesive
- Net weight: 47g
Solid State Relay SSR-40DD 40A 3-32V DC to 5-60V DC SSR 40DD Relay Solid State
- Model: SSR-40 DD.
- Control mode: DC-DC
- Input voltage: 3-32V DC.
- Output voltage: 5-60V DC.
- Output current: 40A.
- On voltage: ≤1v.
- One-off time: ≤10ms.
- Off leakage current: ≤2ma.
- Loading current: 40A
- Control current: 3-25mA DC
- Material: plastic + metal.
- Environment temperature: -30 to +75
- Long service life and high reliability.
- Reduced electromagnetic interference.
- Highly reliable, compact size designed to offer users maximum simplicity.
- Weight: 0. 106Kg.

Reviews
There are no reviews yet.