4N60 N-Channel Mosfet Transistor 600V 2.6A

4N60 Power Mosfet Transistor 500V 14A series designed as the Advanced N-Channel enhancement mode silicon gate power field effect transistor from International Rectifier utilize advanced processing techniques. These power MOSFET Transistors designed explicitly to guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters. And also for applications with low on-resistance requirements. 4N60 manufactured in TO-220FP package that is universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 25 watts.

4N60 is simply a three-terminal silicon device, that offers a current conduction capability of about 2.6A, fast switching speed. Moreover, it features low on-state resistance and a breakdown voltage rating of 600V. This power Mosfet device offers a wide range of applications in switched-mode power supplies. DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications. These resulting transistor exhibit extremely high packing density for low on-resistance. And also combined with high switching speed and rugged device design that  Power MOSFETs provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.