7N90 N-Channel Mosfet Transistor 900V 7A designed as the Advanced N-Channel enhancement mode silicon gate power field effect transistor. This high voltage MOSFET makes use of a complicated termination scheme to supply enhanced voltage-blocking capability without degrading performance over time. Additionally, this advanced MOSFET intended to withstand high energy in avalanche and commutation modes. This feature makes this device ideal high voltage, high speed switching applications in power supplies, converters and PWM motor controls. And also for applications with low on-resistance requirements.7N90 manufactured in TO-220FP package that’s universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 52 watts.
7N90 is simply a three-terminal silicon device, that offers a current conduction capability of about 7A, fast switching speed. Moreover, it features low on-state resistance and a breakdown voltage rating of 900V. This power Mosfet device particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical. And offer additional and safety margin against unexpected voltage transients. These resulting transistor exhibit extremely high packing density for low on-resistance. And also combined with the high switching speed and rugged device design that Power MOSFETs provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.
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