IRF740 Power Mosfet Transistor 400V 10A

These N-Channel enhancement mode power field-effect transistors designed based on planar stripe, DMOS technology. Superior switching performance is provided by this innovative technology, which is specifically tuned to reduce on-state resistance. Also, in the avalanche and commutation modes, withstand strong energy pulses. High-efficiency switching DC/DC converters and switch-mode power supply can use these devices. Electronic light ballast based on half-bridge topology, as well as active power supply adjustment.

IRF740 manufactured in TO-220AB package that is universally accepted for all commercial-industrial applications. IRF740 provides a Drain Source Voltage 400V at a drain current of 10A. These power MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.These MOSFET Transistors designed explicitly to achieve extremely low-voltage, low-current applications. This feature makes this device ideal for use as a Power MOSFET Gate Drivers and Switching Application. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts adopted quickly into new and existing offline power supply designs.

A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in wide range of applications such as in low-voltage (less than 200 V) switch.