IRFP260N N-Channel Power Mosfet Transistor 200V 49A

IRFP260N N-Channel Power Mosfet Transistor 200V 49A series designed as the 5th generation  Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques. These power MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated AC-DC converters. And also for applications with low on-resistance requirements. IRFP260N manufactured in TO-247AC package that is universally accepted  for all commercial-industrial applications. Also at power dissipation levels to approximately 50 watts.

IRF260N is simply a three-terminal silicon device, that offers a current conduction capability of about 49A, fast switching speed. Moreover, it features low on-state resistance, and breakdown voltage rating of 200V. These power Mosfet device offers a wide range of applications in electronic ballast, and low power switching mode power appliances. These resulting transistor exhibit extremely high packing density for low on-resistance. And also combined with high switching speed and rugged device design that HEXFET power MOSFETs provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.