IRS2110 High and Low Side Driver IC

The IR2110 designed as a self-oscillating high voltage, high-speed power MOSFET and IGBT driver comprises of dependent high and low side referenced output channels designed explicitly for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.

The output drivers provide a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime employed to avoid shoot-through in the output half-bridge. Propagation delays are matched to simplify use in high-frequency applications. The floating channel used to drive an N-channel power MOSFET/IGBT in high side configuration which operates up to 500 or 600 volts. Meanwhile, it offers a Gate drive supply voltage at a range from 10 to 20V. Moreover, this gate driver IC features an Undervoltage lockout for both channels. IR2110 Half-Bridge Driver IC manufactured in 14pin-Lead PDIP or 8-Lead SOIC package.

The Half-Bridge Driver IC employed to drive the gates of high- and low-side N-channel MOSFETs (or IGBTs) with a low output impedance to reduce the conduction losses, and a fast switching time to reduce the switching losses. The high-and low-side drivers requires very close matching of the timing characteristics.  Thus allow accurate and efficient switching of the device. This minimises the deadtime from one switch of the half-bridge turning off before the second switch turns on. Isolated half-bridge gate drivers+ widely utilized in many applications that range from isolated dc-to-dc power supply modules where high power density and efficiency are necessary, to solar inverters where high isolation voltage and long-term reliability are mandatory.