Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6
BYQ28E Dual Ultrafast Power Diode 200V 10A
33nf 63V 5mm Pitch Capacitor (10 pcs)
MOQ : 10NOS
- Capacitance: 33nf
- Voltage Rating: 63V
- Pitch: 5mm
- Dielectric Type: Double Metallized PP
- Capacitance Tolerance: ± 5%
- Capacitor Case Style: Radial Box
- Capacitor Terminals: Radial Leaded
- Lead Spacing: 27.5mm
- Operating Temperature Min: -55°C
- Operating Temperature Max: 105°C
- Automotive Qualification Standard
- High Accuracy, Long-Life Polyester Film Capacitor
- Low Leakage
- Easy Mounting
Induction Cooker Sensor
BF495 NPN Transistor 30V 30mA
60NF06 N-Channel Power Mosfet Transistor 60V 60A
SB560 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
BCR8PM Triac
- Repetitive peak off-state Voltage:Â 700 V
- Non-repetitive peak off-state voltage:Â 840V
- RMS on-state current:Â 8A
- Surge on-state current:Â 80A
- Peak gate power dissipation:Â 5 W
- Peak gate voltage:Â 10 V
- Peak gate current:Â 2A
- Repetitive peak off-state current:Â 2mA
- On-state voltage:Â 1.6V
- Gate trigger voltage:Â 1.5V
- Gate trigger current:Â 30mA
- Package:Â TO-220F
LM338K 5-Amp Adjustable Regulator IC
