4700uf 35V Samwha DC Electrolytic Capacitor
RFID 13.56MHz Card
- Contactless transmission of data and supply energy (no battery needed)
- Operating distance: Up to 100mm (depending on antenna geometry)
- Operating frequency: 13.56MHz
- Data transfer: 106 kbit/s
- Data integrity: 16 Bit CRC, parity, bit coding bit counting
- Typical ticketing transaction: <100 ms ( including backup management)
- User-definable access conditions for each memory block
- Data retention of 10 years.
- Write endurance 100 000 cycles
- Reading and writing distance: 2.5-10CM
- Reading and writing time: 1-2MS
- Working temperature: -20 ° -85 °
- Packaging materials: PVC, PET, 0.13 coins
- Packaging technology: ultrasonic automatic line / automatic welding
- Production standards: ISO 14443, ISO 10536
125 KHz RFID CARD THICK
2N60 N-Channel Mosfet Transistor 600V 2A
Induction Cooker Sensor
Mosfet 100N03 SMD
- Type of Transistor: MOSFET
- Type Designator:100N03
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage:30 V
- Maximum Gate-Source Voltage:20 V
- Maximum Drain Current:100 A
- Drain-Source Capacitance:1300 pF
- Maximum Operating Junction Temperature:175 °C
- Maximum Drain-Source On-State Resistance:0.0055 Ohm
- Maximum Power Dissipation:180 W
- Package: TO220
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- High cell density for ultra-low RdsonAvalanche voltage and current are fully characterized.
Goot Tweezer Stainless Steel
- Made by the high-quality stainless steel
- Antistatic, Anti-magnetic and anti-acid
- Cutting-edge parts of pure manual polishing, fine workmanship
- Processed in high temperature and planting antistatic material
- Tips after a long time use are still super straight.
- Suitable for all kinds of electronic components, convenient, improve the work efficiency.
IRF9530 P-Channel Power Mosfet Transistor -100V -12A
3.3uf 250V DC Axial Capacitor
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220