IR2155 Self-Oscillating Half-Bridge Driver IC
- Self-Oscillating Half-Bridge Driver
- High Side Floating Supply Voltage Max.: 625V
- Supply current Max.: 5mA
- Clamp Voltage Max.: 16.8V
- High level output voltage Max.: 100mV
- Low level output voltage Max.: 100mV
- Total Power Dissipation: 1W
- Oscillator frequency Max.: 106kHz
- Rise Time Max.: 120ns
- Fall Time Max.: 70ns
- Package: DIP-8
IRF1010E N-Channel Power Mosfet Transistor 60V 81A
- Type Designator: IRF1010E
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 170 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 10 V
- Maximum Drain Current |Id|: 81 A
- Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 130 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
- Power Dissipation: 170W
- Package: TO-220AB
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
IRF520 MOSFET DRIVER MODULE SENSOR
- Operating Voltage: 3.3v & 5v
- Digital level port
- Output load voltage: 0-24v
- Output load current: <5A
- The heat sink is added for currently more than 1A
- Compatible with Arduino, MCU, ARM, Raspberry pi
- PWM dimming LED used to step-less dimming, variable-speed motor
- Output PWM can be adjusted by the original IFR520 MOS
- Arduino can drive up to 24V, such as led lights, dc motors, miniature pumps, solenoid valves etc.
- Dimension:34*30*18mm
- Size: 10gm
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
IRF540N Power Mosfet Transistor 100V 33A
- Drain Current: ID = 33A at TC = 250C and VGS = 10V
- Gate-to-Source Voltage: VGS = ± 20 V
- Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
- VDSS: 100V
- Package: TO-220AB
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
IRF630 N-Channel Power Mosfet Transistor 200V 9A
IRF634 N-Channel Mosfet Transistor 250V 8.1A
IRF730 N-Channel Power Mosfet Transistor 400V 5.5A
- N-Channel Power Mosfet
- Drain Source Voltage: 400V
- Drain Current: IDÂ = 5.5A at TCÂ = 25oC
- Static Drain-to-Source On-Resistance: RDS(on) = 1000 mΩ
- Qg Typical: 25.3Nc
- Package: TO-220AB
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC