PCF8582E-2 IC DIP-8
- Low power CMOS
- Non-volatile storage of 2 kbits organized as 256 × 8-bitÂ
- Â Single supply with full operation down to 2.5 VÂ
- Â On-chip voltage multiplierÂ
- Â Serial input/output I2C-busÂ
- Write operations:Â
- Â Â Â Â Â Â Â Â Â Â Â Â Â -Â byte write modeÂ
- Â Read operations:Â
- Â Internal timer for writing (no external components)Â
- Â Internal power-on resetÂ
- Â 0 kHz to 100 kHz clock frequency
- High reliability by using a redundant storage code
2 Way 5A Wire Connector
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
150uf 420V DC Electrolytic Capacitor
DB107 1A Bridge Rectifier
- Maximum Recurrent Peak Reverse Voltage VRRM: 1000V
- Maximum RMS Bridge Input Voltage VRMS: 700V
- Maximum DC Blocking Voltage VDC:Â 1000V
- Maximum Average Forward Output Current at TA = 40℃,  IO : 1.0 A
- Glass passivated die construction
- Low forward voltage drop
- High current capability
- High surge current capability
- Plastic material-UL flammability 94V-0
4.0 MHz 3 Pin Ceramic Crystal Oscillator
0.22uf 400V DC Polyester Capacitor
- Capacitance: 0.22uf
- Voltage Rating DC: 400 V
- Tolerance: +/-5%
- Mounting: THT
- Leakage Current: 3 uA
- Dimensions:31*6*2.5 mm
- Operating Temperature: -40~85 C
- Lead Spacing: 7mm
- Lead Diameter : 0.5mm
- Non-inductive, epoxy DIP coated, high moisture resistance.
- The dissipation factor is normally low and it is stable against high frequency and change of temperature.
- Recommended for high-frequency circuits like an s-curve compensating circuit.
- High reliability because of its excellent Self-Healing performance
74LS170 4×4 Register IC
- Technology Family: LS
- Rating: Catalog
- Supply voltage: 5.25V
- Frequency at nominal voltage: 35 MHz
- Typical propagation delay: 21ns
- Simultaneous Read/Write Operation
- Expandable to 512 Words of n-Bits
- Typical Access Time of 20 ns
- Low Leakage Open-Collector Outputs for Expansion
- Typical Power Dissipation of 125 mW
- ESD protection
- Operating temperature: 0ºC to 70ºC
