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2SK1356 N-Channel Mosfet Transistor 900V 3A
- Type Designator: 2SK1356
- Type of Transistor: MOSFET
- N-Channel Mosfet
- Drain Current: 3A
- Drain Source Voltage: 900V
- Static Drain-Source On-Resistance: <4.3Ω
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 40 W
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 55 nS
- Drain-Source Capacitance (Cd): 120 pF
- Maximum Drain-Source On-State Resistance (Rds): 4.3 Ohm
- Package: TO-22
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
